Q Fund Management Hong Kong Ltd Buys 20,000 Shares of Roundhill Memory ETF $DRAM

Q Fund Management Hong Kong Ltd purchased a new stake in shares of Roundhill Memory ETF (BATS:DRAM) during the third quarter, according to its most recent Form 13F filing with the Securities & Exchange Commission. The firm purchased 20,000 shares of the ETF’s stock, valued at approximately $1,207,000. Roundhill Memory ETF makes up about 1.1% of Q Fund Management Hong Kong Ltd’s investment portfolio, making the stock its 14th largest position.

A number of other large investors also recently made changes to their positions in DRAM. Comprehensive Financial Planning Inc. PA bought a new stake in Roundhill Memory ETF during the second quarter worth $27,000. IFP Advisors Inc purchased a new position in Roundhill Memory ETF in the second quarter worth $32,000. Signal Advisors Wealth LLC grew its stake in Roundhill Memory ETF by 28.8% in the 3rd quarter. Signal Advisors Wealth LLC now owns 3,552 shares of the ETF’s stock valued at $214,000 after purchasing an additional 794 shares during the period. Strengthening Families & Communities LLC bought a new position in Roundhill Memory ETF in the 2nd quarter valued at $70,000. Finally, Allworth Financial LP bought a new position in Roundhill Memory ETF in the 2nd quarter valued at $165,000.

Roundhill Memory ETF Stock Down 3.4%

Shares of Roundhill Memory ETF stock opened at $52.84 on Wednesday. Roundhill Memory ETF has a 1 year low of $26.14 and a 1 year high of $81.34. The company’s fifty day simple moving average is $57.50.

Roundhill Memory ETF (BATS: DRAM) is an exchange-traded fund offered by Roundhill Investments that provides targeted exposure to the memory semiconductor industry. Listed on the Cboe BZX Exchange under the ticker DRAM, the fund is intended to give investors access to companies whose primary business activities are connected to memory chips and related technologies.

The fund focuses on firms operating across the memory semiconductor supply chain, including companies involved in design and development of DRAM and NAND memory, wafer fabrication, packaging and testing, and the manufacture of semiconductor capital equipment and materials.